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BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 02 -- 1 June 2010 Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f (MHz) VDS (V) PL(AV) (W) PL(M)[1] (W) Gp (dB) D (%) ACPR885k (dBc) ACPR1980k (dBc) 9 70 14 23 -49[3] -64[3] 1-carrier N-CDMA[2] 3400 to 3600 28
[1] [2] [3] PL(M) stands for peak output power. Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. Measured within 30 kHz bandwidth.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W: Qualified up to a maximum VDS operation of 32 V Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation Internally matched for ease of use Low gold plating thickness on leads Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
1.3 Applications
RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLF6G38-50 (SOT502A)
1 1 3 2 2 3
sym112
BLF6G38LS-50 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLF6G38-50 BLF6G38LS-50 Description flanged ceramic package; 2 mounting holes; 2 leads earless flanged ceramic package; 2 leads Version SOT502A SOT502B Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 16.5 +150 200 Unit V V A C C
BLF6G38-50_BLF6G38LS-50
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
2 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5. Symbol Rth(j-case) Thermal characteristics Parameter Conditions Type BLF6G38-50 BLF6G38LS-50 Typ 0.9 0.7 Unit thermal resistance from Tcase = 80 C; junction to case PL = 50 W
6. Characteristics
Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VGS = 0 V; ID = 0.4 mA VDS = 10 V; ID = 80 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = +11 V; VDS = 0 V VDS = 10 V; ID = 2.8 A Min 65 1.4 11.8 Typ 2 16.4 5.6 0.18 1.17 Max 2.4 2.8 280 0.29 Unit V V A A nA S pF
drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 2.8 A feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz
7. Application information
Table 7. Application information Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 450 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production circuit. Symbol PL(M) Gp RLin D ACPR885k Parameter peak output power power gain input return loss drain efficiency adjacent channel power ratio (885 kHz) Conditions PL(AV) = 9 W PL(AV) = 9 W PL(AV) = 9 W PL(AV) = 9 W PL(AV) = 9 W
[1] [1]
Min 65 20 -46 -62
Typ 70 -10 23 -49 -64
Max -
Unit W dB dB % dBc dBc
12.5 14
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 9 W
[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 450 mA; PL = PL(1dB); f = 3600 MHz.
BLF6G38-50_BLF6G38LS-50 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
3 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol x 30 subchannels; PL = PL(nom) + 3.86 dB.
Table 8. Zone 0 Zone 0 Zone 0 Frame structure Modulation technique QPSK1/2 64QAM3/4 64QAM3/4 Data length 3 bit 692 bit 10000 bit FCH data data 2 symbols x 4 subchannels 2 symbols x 26 subchannels 44 symbols x 30 subchannels
Frame contents
7.2.2 Graphs
001aah395 001aah396
5 EVM (%) 4
15 Gp (dB) 13 Gp
30 D (%) 24
3
11 D
18
2
9
12
1
7
6
0 0 4 8 PL(AV) (W) 12
5 0 4 8 PL(AV) (W)
0 12
VDS = 28 V; IDq = 450 mA; f = 3500 MHz.
VDS = 28 V; IDq = 450 mA; f = 3500 MHz.
Fig 1.
EVM as a function of average load power; typical values
Fig 2.
Power gain and drain efficiency as functions of average load power; typical values
BLF6G38-50_BLF6G38LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
4 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
-20 ACPR (dBc) -30
(1)
001aah397
-40
-50
(2) (3)
-60
-70
0
4
8 PL(AV) (W)
12
VDS = 28 V; IDq = 450 mA; f = 3500 MHz. (1) (2) (3) f = 10 MHz f = 20 MHz f = 30 MHz
Fig 3.
Adjacent channel power ratio as a function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
001aah398 001aah399
16 Gp (dB) 15 Gp 14
D (%) 25
26
-40 ACPR (dBc) -50
(1) (2)
ACPR885k
24
13
D
23
ACPR1500k
(1) (2)
12
22
-60
(1)
ACPR1980k
11
21
(2)
10 3400
3450
3500
3550 f (MHz)
20 3600
-70 3400
3450
3500
3550 f (MHz)
3600
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component
Fig 4.
Power gain and drain efficiency as functions of frequency; typical values
Fig 5.
Adjacent channel power ratio as a function of frequency; typical values
BLF6G38-50_BLF6G38LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
5 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
18 Gp (dB) 16
001aah400
40 D (%) 30
-30 ACPR (dBc) -40
001aah401
Gp 14 20
-50
(1) (2)
-60 12 D 10 -70
ACPR885k
(1)
ACPR1500k ACPR1980k
(2)
(1) (2)
10 10-1
0 1 10 PL (W) 102
-80 10-1
1
10 PL (W)
102
VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz.
VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component
Fig 6.
Power gain and drain efficiency as functions of load power; typical values
Fig 7.
Adjacent channel power ratio as a function of load power; typical values
16 Gp (dB) 15
(2) (1)
001aah402
1.5 Pi (W) 1.0
(3) (2) (1)
001aah403
14
(3)
0.5 13
12 10-1
1
10 PL (W)
102
0 10-1
1
10 PL (W)
102
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz
VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (2) f = 3500 MHz (3) f = 3600 MHz
Fig 8.
Power gain as a function of load power; typical values
Fig 9.
Input power as a function of load power; typical values
BLF6G38-50_BLF6G38LS-50
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
6 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
8. Test information
C8 R2 C3 R1 C1 C2 C4 C6
C9 C7 L1
C10
C5
BLF6G38-50
INPUT-REV 1A 30RF35 NXP
BLF6G38-50
OUTPUT-REV 1A 30RF35 NXP
001aah404
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 9 for list of components.
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit Table 9. List of components For test circuit, see Figure 10. Component C1, C4, C5, C6 C2 C3, C8, C9 C7 C10 R1, R2 L1
[1] [2] [3]
Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor SMD resistor ferrite SMD bead
Value 10 pF 0.7 pF 100 nF 10 F; 50 V 470 F; 63 V 9.1 [1] [1] [2] [3]
Remarks
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
American Technical Ceramics type 100A or capacitor of same quality. Vishay VJ1206Y104KXB or capacitor of same quality. TDK C5750X7R1H106M or capacitor of same quality.
Table 10. f (GHz) 3.4 3.5 3.6 3.8
BLF6G38-50_BLF6G38LS-50
Measured test circuit impedances Zi () 5.48 - j9.38 5.39 - j9.43 5.55 - j9.15 9.60 - j12.48
All information provided in this document is subject to legal disclaimers.
Zo () 12.42 - j4.58 10.41 - j5.31 14.31 - j7.04 17.70 - j11.57
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
7 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 11. Package outline SOT502A
BLF6G38-50_BLF6G38LS-50 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
8 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 12. Package outline SOT502B
BLF6G38-50_BLF6G38LS-50 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
9 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
10. Abbreviations
Table 11. Acronym CCDF CW EVM FCH FFT IBW LDMOS LDMOST N-CDMA PAR PUSC RF SMD VSWR WCS WiMAX Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Narrowband Code Division Multiple Access Peak-to-Average power Ratio Partial Usage of SubChannels Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio Wireless Communications Service Worldwide Interoperability for Microwave Access
11. Revision history
Table 12. Revision history Release date 20100601 Data sheet status Product data sheet Change notice Supersedes BLF6G38-50_BLF6G38LS-50_1 Document ID BLF6G38-50_BLF6G38LS-50 v.2 Modifications: BLF6G38-50_BLF6G38LS-50_1
* *
Data sheet status changed from preliminary to product. Section 12 "Legal information" updated. Preliminary data sheet -
20080212
BLF6G38-50_BLF6G38LS-50
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 1 June 2010
10 of 13
NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
12.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
BLF6G38-50_BLF6G38LS-50
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Product data sheet
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NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G38-50_BLF6G38LS-50
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Product data sheet
Rev. 02 -- 1 June 2010
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NXP Semiconductors
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier N-CDMA broadband performance at 9 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 June 2010 Document identifier: BLF6G38-50_BLF6G38LS-50

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